13NM60N Просмотр технического описания (PDF) - STMicroelectronics

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13NM60N

N-channel 600 V, 0.320 Ω typ., 10 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL13NM60N

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 10 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 10 A, di/dt = 100 A/µs

-

VDD = 100 V (see Figure 15)

-

trr

Reverse recovery time

ISD = 10 A, di/dt = 100 A/µs

-

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

-

IRRM Reverse recovery current

(see Figure 15)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

10 A

40 A

1.6 V

340

ns

2

µC

18

A

290

ns

190

µC

17

A

DocID018870 Rev 2

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