FDD120AN15A0_F085 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD120AN15A0_F085 Datasheet PDF : 6 Pages
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Typical Characteristics
500
ID = 4A
400
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
300
TJ = 175oC
200
TJ = 25oC
100
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
2.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
-80
ID = 4A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.5
VGS = VDS
ID = 250μA
1.2
0.9
0.6
0.3
0.0
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
1.20
1.15
ID = 1mA
1.10
1.05
1.00
0.95
0.90
-80
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
Ciss
1000
100
Coss
Crss
10
f = 1MHz
VGS = 0V
1
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 4A
8
6
VDD = 60V
VDD = 75V
VDD = 90V
4
2
0
0
2
4
6
8
10
12
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDD120AN15A0_F085 Rev. C1
5
www.fairchildsemi.com
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