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VS-111RKI40M(2014) Просмотр технического описания (PDF) - Vishay Semiconductors

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VS-111RKI40M
(Rev.:2014)
Vishay
Vishay Semiconductors Vishay
VS-111RKI40M Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
www.vishay.com
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-110RKI...PbF, VS-111RKI...PbF Series
Vishay Semiconductors
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
VALUES
TYP. MAX.
TJ = TJ maximum, tp 5 ms
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3.0
3.0
TJ = TJ maximum, tp 5 ms
20
10
TJ = - 40 °C
180
-
TJ = 25 °C
TJ = 140 °C
TJ = - 40 °C
TJ = 25 °C
Maximum required gate
80
120
trigger/current/voltage are 40
-
the lowest value which will
trigger all units 12 V anode 2.5
-
to cathode applied
1.6
2
TJ = 140 °C
1
-
Maximum gate current/
voltage not to trigger is the
6.0
TJ = TJ maximum
maximum value which will
not trigger any unit with
rated VDRM anode to
cathode applied
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
TJ
Maximum storage temperature range
TStg
Maximum thermal resistance, junction to case
RthJC
DC operation
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 140
°C
-40 to 150
0.27
K/W
0.1
15.5
(137)
14
(120)
N·m
(lbf · in)
130
g
TO-209AC (TO-94)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
180°
0.043
0.031
120°
0.052
0.053
90°
0.066
60°
0.096
0.071
0.101
TJ = TJ maximum
K/W
30°
0.167
0.169
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3
Document Number: 94379
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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