FDB9406_F085 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDB9406_F085 Datasheet PDF : 6 Pages
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Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
40
VDS = 40V, TJ = 25oC
-
VGS = 0V
TJ = 175oC(Note 4)
-
VGS = ±20V
-
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
2.0
ID = 80A,
TJ = 25oC
-
VGS= 10V TJ = 175oC(Note 4) -
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
f = 1MHz
-
VGS = 0 to 10V
VDD = 32V
-
VGS = 0 to 2V
ID = 80A
-
-
-
Typ
-
-
-
-
2.83
1.31
2.20
7710
2015
102
2.1
107
14
33
18
Max Units
-
V
1
μA
1
mA
±100 nA
4.0
V
1.8 m Ω
2.8 m Ω
-
pF
-
pF
-
pF
-
Ω
138 nC
19
nC
-
nC
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 20V, ID = 80A,
-
VGS = 10V, RGEN = 6Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 80A, VGS = 0V
-
IF = 80A, dISD/dt = 100A/μs,
-
VDD=32V
-
Notes:
4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.
-
107
ns
28
-
ns
48
-
ns
50
-
ns
20
-
ns
-
100 ns
-
1.25
V
81
92
ns
109 140
nC
FDB9406_F085 Rev. C1
2
www.fairchildsemi.com
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