107N20NA Просмотр технического описания (PDF) - Infineon Technologies

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производитель

107N20NA

OptiMOS™3 Power-Transistor

Infineon Technologies 

IPB107N20NA IPP110N20NA

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance, junction -

ambient

R thJC

R thJA

minimal footprint

6 cm2 cooling area2)

min.

Values

typ.

Unit

max.

-

-

0.5 K/W

-

-

62

-

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

200

-

Gate threshold voltage

V GS(th) V DS=V GS, I D=270 µA

2

3

Zero gate voltage drain current

I DSS

V DS=160 V, V GS=0 V,

T j=25 °C

-

0.1

-V

4

1 µA

V DS=160 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance

R DS(on)

V GS=10 V, I D=88 A,

(TO220)

-

V GS=10 V, I D=88 A,

-

(TO263)

10

100

1

100 nA

9.9

11 mW

9.6

10.7

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.1

page 2

2011-05-11

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