SKW25N120(2008) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
Список матч
SKW25N120
(Rev.:2008)
(Rev.:2008)
Infineon Technologies
SKW25N120 Datasheet PDF : 13 Pages
| |||
SKW25N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t F
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=25A,
VGE=15/0V,
RG=22Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=25A,
diF/dt=650A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
45
40
730
30
2.2
1.5
3.7
90
1.0
20
470
Unit
max.
60 ns
52
950
39
2.9 mJ
2.0
4.9
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t F
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=800V,IC=25A,
VGE=15/0V,
RG=22Ω,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=800V, IF=25A,
diF/dt=750A/µs
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
36
820
42
3.8
2.9
6.7
280
4.3
32
130
Unit
max.
60 ns
43
990
50
4.6 mJ
3.8
8.4
ns
µC
A
A/µs
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_2 Sep 08
Share Link: