IRG4BC10S Просмотр технического описания (PDF) - International Rectifier
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IRG4BC10S Datasheet PDF : 8 Pages
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500
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400
Coes = Cce + Cgc
Cies
300
C oes
200
100
C res
0
1
10
100
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC10S
20
VCC = 400V
I C = 8A
15
10
5
0
0
5
10
15
20
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.8 VCC = 480V
VGE = 15V
TJ = 25 °C
IC = 8.0A
2.7
100 RG = O10h0mΩ
VGE = 15V
VCC = 480V
10
1
IC = 16A
IC = 8A
IC = 4A
2.6
0
20
40
60
80
100
RRGG ,, GGaatteeRReessisistatannccee(O( Ωhm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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