IRG4PC30SPBF Просмотр технического описания (PDF) - International Rectifier
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IRG4PC30SPBF Datasheet PDF : 9 Pages
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2000
1500
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
500
0
1
Coes
Cres
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PC30SPbF
20 VCC = 400V
I C = 18A
16
12
8
4
0
0
10
20
30
40
50
60
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80
VCC = 480V
VGE = 15V
TJ = 25 ° C
3.76 IC = 18A
3.72
3.68
3.64
3.60
0
10
20
30
40
50
RG , Gate Resistance (OΩhm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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100 RG = 23OΩhm
VGE = 15V
VCC = 480V
10
1
IC = 36A
IC = 18A
IC = 9.90AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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