STF18N60M2(2014) Просмотр технического описания (PDF) - STMicroelectronics

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STF18N60M2
(Rev.:2014)

N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package

STMicroelectronics 

STF18N60M2

Electrical characteristics

Figure 8. Capacitance variations

Figure 9. Normalized gate threshold voltage vs.

temperature

C

(pF)

AM15841v1

VGS(th)

(norm)

ID=250 µA

AM15828v1

1000

1.1

Ciss

1.0

100

0.9

Coss

10

0.8

1

0.1

1

Crss

10

100 VDS(V)

0.7

-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 10. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

2.3

2.1

1.9

ID=6.5 A

VGS=10V

AM15829v1

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 11. Source-drain diode forward

characteristics

VSD (V)

AM15842v1

1.4

1.2

TJ=-50°C

1

0.8

0.6

TJ=150°C

TJ=25°C

0.4

0.2

0

0 2 4 6 8 10 12 ISD(A)

Figure 12. Normalized V(BR)DSS vs temperature

V(BR)DSS

(norm)

1.11

ID=1mA

AM15831v1

1.09

1.07

1.05

1.03

1.01

0.99

0.97

0.95

0.93

-50 -25 0 25 50 75 100 125 TJ(°C)

Figure 13. Output capacitance stored energy

Eoss(µJ)

AM15843v1

6

5

4

3

2

1

0

0 100 200 300 400 500 600 VDS(V)

DocID024729 Rev 3

7/13

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