3KASMC36AHM3/57T Просмотр технического описания (PDF) - Vishay Semiconductors

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3KASMC36AHM3/57T

Surface Mount PAR® Transient Voltage Suppressors

Vishay Semiconductors 

New Product

www.vishay.com

3KASMC10A thru 3KASMC43A

Vishay General Semiconductor

Surface Mount PAR® Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

DO-214AB (SMC)

FEATURES

• Junction passivation optimized design

passivated anisotropic rectifier technology

• TJ = 185 °C capability suitable for high

reliability and automotive requirement

• Available in uni-directional polarity only

• 3000 W peak pulse power capability with a 10/1000 μs

waveform

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

VWM

VBR

PPPM

PD

IFSM

TJ max.

Polarity

10 V to 43 V

11.1 V to 52.8 V

3000 W

6.0 W

200 A

185 °C

Uni-directional

Package

DO-214AB (SMC)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

MECHANICAL DATA

Case: DO-214AB (SMC)

Molding compound meets UL 94 V-0 flammability rating

Base P/NHM3 - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HM3 suffix meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 3)

Peak power pulse current with a 10/1000 μs waveform (1) (fig. 1)

Peak forward surge current 8.3 ms single half sine-wave (2)

PPPM

IPPM

IFSM

3000

See next table

200

Power dissipation on infinite heatsink, TL = 75 °C (fig. 6)

Maximum instantaneous forward voltage at 100 A (2)

PD

6.0

VF

3.5

Operating junction and storage temperature range

TJ, TSTG

- 65 to + 185

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.

(2) Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

UNIT

W

A

A

W

V

°C

Revision: 05-Mar-13

1

Document Number: 89962

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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