IRF7809AVPBF Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

Список матч

IRF7809AVPBF

HEXFET Power MOSFET. VDS = 30V, RDS(on) = 7.0mΩ

International Rectifier 

IRF7809AVPbF

1000

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

100

1000

VGS

TOP 10V

4.5V

3.7V

3.5V

3.3V

3.0V

2.7V

BOTTOM 2.5V

100

10

0.1

2.5V

20µs PULSE WIDTH

TJ= 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

2.5V

10

0.1

20µs PULSE WIDTH

TJ= 150 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 150°C

10

2.4

TJ = 25°C

V DS = 15V

20µs PULSE WIDTH

2.6

2.8

3.0

3.2

3.4

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

2.0 ID = 15A

1.5

1.0

0.5

VGS= 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

Share Link: