BAT54CXV3 Просмотр технического описания (PDF) - ON Semiconductor

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BAT54CXV3

Dual Series Schottky Barrier Diodes

ON Semiconductor 

BAT54CXV3

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(IR = 10 mA)

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz)

V(BR)R

30

−

−

V

CT

−

7.6

10

pF

Reverse Leakage

(VR = 25 V)

IR

−

0.5

2.0

mAdc

Forward Voltage

(IF = 0.1 mA)

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 30 mA)

(IF = 100 mA)

VF

V

−

0.22

0.24

−

0.29

0.32

−

0.35

0.40

−

0.41

0.50

−

0.52

0.80

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)

trr

−

−

5.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820 W

+10 V

2k

100 mH IF

0.1 mF

0.1 mF

tr

tp

T

IF

10%

trr

T

50 W OUTPUT

PULSE

GENERATOR

DUT

50 W INPUT

SAMPLING

OSCILLOSCOPE VR

90%

INPUT SIGNAL

iR(REC) = 1 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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