NTE386 Просмотр технического описания (PDF) - NTE Electronics

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NTE386

Silicon NPN Transistor Audio Power Amp, Switch

NTE Electronics 

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Sustaining Voltage

Collector Cutoff Current

Emitter Cutoff Current

ON Characteristics (Note 2)

VCEO(sus) IC = 100mA, IB = 0

ICEV VCEV = 800V, VEB(off) = 1.5V

ICER VCE = 800V, RBE = 50Ω, TC = +100°C

IEBO VBE = 6V, IC = 0

DC Current Gain

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

Dynamic Characteristics

hFE

VCE(sat)

VBE(sat)

VCE = 5V, IC = 5A

IC = 10A, IB = 2A

IC = 20A, IB = 6.7A

IC = 10A, IB = 2A

Output Capacitance

Ccb VCB = 10V, IE = 0, ftest = 1kHz

Switching Characteristics (Resistive Load)

Dealy Time

Rise Time

Storage Time

Fall Time

td

VCC = 250V, IC = 10A, IB1 = 2A,

tr

VBE(off) = 5V, tp = 10µs,

Duty Cycle ≤ 2%

ts

tf

Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle ≤ 2%.

Min Typ Max Unit

500 – – V

– – 0.25 mA

– – 5.0 mA

– – 1.0 mA

10 – 60

– – 1.8 V

– – 5.0 V

– – 1.8 V

125 – 500 pF

– 0.02 0.1 µs

– 0.3 0.7 µs

– 1.6 4.0 µs

– 0.3 0.7 µs

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

.215 (5.45)

.430

(10.92)

1.187

(30.16)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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