2SB649 Просмотр технического описания (PDF) - Unspecified

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2SB649

HighV oltageNPNPowerT ransistors (3A, 1500V)

Unspecified 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126C Plastic-Encapsulate Transistors

2SB649/2SB649A TRANSISTOR (PNP)

FEATURES

Power amplifier applications

TO-126C

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

1. EMITTER

2. COLLECTOR

3. BASE

123

2SB649

-120

V

2SB649A

-160

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current –Continuous

-1.5

A

PC

Collector Dissipation

1

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN TYP

MAX UNIT

Collector-base breakdown voltage

V(BR)CBO Ic=-1mA,IE=0

-180

V

Collector-emitter breakdown voltage

V(BR)CEO Ic=-10mA,IB=0

2SB649 -120

2SB649A -160

V

Emitter-base breakdown voltage

V(BR)EBO IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO VCB=-160V,IE=0

-10 µA

Emitter cut-off current

DC current gain

IEBO

hFE(1)

VEB=-4V,IC=0

VCE=-5V,IC=-150mA

hFE(2) VCE=-5V,IC=-500mA

2SB649

60

2SB649A 60

30

-10 µA

320

200

Collector-emitter saturation voltage

VCE(sat) IC=-500mA,IB=-50mA

-1

V

Base-emitter voltage

VBE VCE=-5V,IC=-150mA

-1.5 V

Transition frequency

fT

VCE=-5V,IC=-150mA

140

MHz

Collector output capacitance

CLASSIFICATION OF hFE(1)

Rank

Cob

VCB=-10V,IE=0,f=1MHz

B

C

27

pF

D

Range 2SD649

60-120

100-200

160-320

2SD649A

60-120

100-200

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