ST75C520 Просмотр технического описания (PDF) - STMicroelectronics
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ST75C520 Datasheet PDF : 45 Pages
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ST75C520
II.2 - Hardware Block Diagram
PROGRAM ROM 8K x 32
XTAL 55
EXTAL 56
12
BOUNDARY SCAN
(42 to 51 - 53-54)
EBS 3
ST18932
DSP CORE
RAM
2K x 16
RESET 52
SA [0..6]
7
(17 to 23)
SD [0..7]
(26 to 33)
8
SDS (SDR) 34
SR/W (SWR) 35
SCS 36
SDTACK 37
DUAL
PORT
RAM
64 x 8
P
S
A
S
S
I
CROM
8K x 16
E
Y
E
G
E
O
SINTR 38
INT/MOT 39
V.24 INTERFACE
11 12 13 14 10 16 15
7 6 54
ST75C520
FIFO
8 x 16
IIR
FIR
DPLL AND CONTROL
FIFO
8 x 16
FIR
IIR
FIR
1 TXA2
2 TXA1
58 VREFP
63 VCM
57 VREFN
60 RXA1
61 RXA2
8-24
40
9-25
41
59 62 64
III - ELECTRICAL SPECIFICATIONS
Unless otherwise noted, electrical characteristics are specified over the operating range. Typical value are
given for VDD = +5V and tamb = 25°C.
III.1 - Maximum Ratings (referenced to GND)
Symbol
Parameter
Value
Unit
VDD
VI, VIN
II, IIN
DC Supply Voltage
Digital or Analog Input Voltage
Digital or Analog Input Current
-0.3 to 7.0
V
-0.3 to (VDD + 0.3)
V
±1
mA
IO
Digital Output Current
± 20
mA
IOUT
Analog Output Current
± 10
mA
Toper
Tstg
Ptot
Operating Temperature
Storage Temperature (plastic)
Maximum Power Dissipation
0, + 70
°C
- 40, + 125
°C
1000
mW
Stresses above those hereby listed may cause damage to the device. The ratings are stress related only and functional operation of the device
at conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability. Standard MOS circuits handling procedure should be used to avoid possible damage to the
device.
III.2 - DC Characteristics
VDD = 5.0V ± 5%, GND = 0V, Tamb = 0 to 70°C (unless otherwise specified).
III.2.1 - Power Supply and Common Mode Voltage
Symbol
VDD
IDD
IDD-lp
VCM
Parameter
Supply Voltage
Supply Current (internal oscillator)
Supply Current in Low Power Mode
Common Mode Voltage
Min.
4.75
VDD/2 -5%
Typ.
5
75
1
VDD/2
Max.
Unit
5.25
V
100
mA
mA
VDD/2 + 5% V
6/45
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