IGP10N60T Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

IGP10N60T

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Infineon Technologies 

IGP10N60T

TRENCHSTOP™ Series

q

1 ,0 m J

*) Eon and Etsinclude losses

due to diode recovery

0 ,8 m J

0 ,6 m J

0 ,4 m J

0 ,2 m J

Ets*

E off

0,8 mJ

*) Eon and Ets include losses

due to diode recovery

0,6 mJ

Eon*

0,4 mJ

0,2 mJ

Ets*

E off

Eon*

0 ,0 m J

0A

5A

10A

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, rG = 23Ω,

Dynamic test circuit in Figure E)

0,0 mJ











RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ = 175°C,

VCE = 400V, VGE = 0/15V, IC = 10A,

Dynamic test circuit in Figure E)

0 ,6 m J

*) Eon and Ets include losses

due to diode recovery

0 ,5 m J

Ets*

0 ,4 m J

0,3mJ Eoff

0 ,2 m J

E*

0,1mJ on

0 ,0 m J

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE = 400V,

VGE = 0/15V, IC = 10A, rG = 23Ω,

Dynamic test circuit in Figure E)

0 ,8 m J

*) Eon and Ets include losses

due to diode recovery

0 ,6 m J

Ets*

0 ,4 m J

E off

0 ,2 m J

Eon*

0 ,0 m J

300V 350V 400V 450V 500V 550V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ = 175°C,

VGE = 0/15V, IC = 10A, rG = 23Ω,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

7

Rev. 2.5 30.04.2015

Share Link: