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NESG3031M05(2004) Просмотр технического описания (PDF) - California Eastern Laboratories.

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Компоненты Описание
Список матч
NESG3031M05
(Rev.:2004)
CEL
California Eastern Laboratories. CEL
NESG3031M05 Datasheet PDF : 3 Pages
1 2 3
PRELIMINARY DATA SHEET
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
NESG3031M05
FEATURES
LOW NOISE FIGURE AND HIGH-GAIN
NF = 0.95 dB TYP, Ga = 10 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP, Ga = 9.5 dB TYP @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
• MAXIMUM STABLE POWER GAIN:
MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz
SiGe HBT TECHNOLOGY:
USH3 process, fmax = 110 GHz
M05 PACKAGE:
Flat-lead 4 pin thin-type super minimold package
ORDERING INFORMATION
PART NUMBER
QUANTITY
NESG3031M05
NESG3031M05-T1
50 pcs (Non reel)
3 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales ofce.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
SYMBOL
RATINGS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
12.0
4.3
1.5
35
150
150
65 to +150
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
UNIT
V
V
V
mA
mW
°C
°C
California Eastern Laboratories

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