CS5150 Просмотр технического описания (PDF) - Cherry semiconductor
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CS5150 Datasheet PDF : 14 Pages
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Electrical Characteristics: 0°C < TA < +70°C; 0°C < TJ < +85°C; 8V < VCC1 < 14V; 5V < VCC2 < 14V; DAC Code: VID2 = VID1 =
VID0 = 1; VID3 = 0; CVGATE(L) and CVGATE(H) = 1nF; COFF = 330pF; CSS = 0.1µF, unless otherwise specified.
PARAMETER
s DAC: continued
VID3
0
VID2
1
VID1
0
0
1
0
0
0
1
0
0
1
0
0
0
0
0
0
VID0
1
0
1
0
1
0
TEST CONDITIONS
MIN
TYP
MAX
UNIT
3.0096 3.0400
3.0704
V
3.1086 3.1400
3.1714
V
3.2076 3.2400
3.2724
V
3.3066 3.3400
3.3734
V
3.4056 3.4400
3.4744
V
3.5046 3.5400
3.5754
V
s VGATE(H) and VGATE(L)
Out SOURCE Sat at 100mA
Out SINK Sat at 100mA
Out Rise Time
Out Fall Time
Shoot-Through Current
Measure VCC1 – VGATE(L),;VCC2 – VGATE(H)
Measure VGATE(H) – VPGnd;
VGATE(L) – VPGnd
1V < VGATE(H) < 9V; 1V < VGATE(L) < 9V
VCC1 = VCC2 = 12V
9V > VGATE(H) > 1V; 9V > VGATE(L) > 1V
VCC1 = VCC2 = 12V
Note 1
1.2
2.0
V
1.0
1.5
V
30
50
ns
30
50
ns
50
mA
Delay VGATE(H) to VGATE(L)
VGATE(H) falling to 2V; VCC1 = VCC2 = 8V
25
50
ns
VGATE(L) rising to 2V
Delay VGATE(L) to VGATE(H)
VGATE(L) falling to 2V; VCC1 = VCC2 = 8V
25
50
ns
VGATE(H) rising to 2V
VGATE(H), VGATE(L) Resistance Resistor to LGnd
20
50
100
kΩ
VGATE(H), VGATE(L) Schottky
LGnd to VGATE(H) @ 10mA
600
800
mV
LGnd to VGATE(L) @ 10mA
s Soft Start (SS)
Charge Time
Pulse Period
Duty Cycle
COMP Clamp Voltage
VFFB SS Fault Disable
High Threshold
1.6
3.3
5.0
ms
25
100
200
ms
(Charge Time/Pulse Period) × 100
1.0
3.3
6.0
%
VFB = 0V; VSS = 0
0.50
0.95
1.10
V
VGATE(H) = Low; VGATE(L) = Low
0.9
1.0
1.1
V
2.5
3.0
V
s PWM Comparator
Transient Response
VFFB Bias Current
s Supply Current
ICC1
ICC2
Operating ICC1
Operating ICC2
s COFF
Normal Charge Time
Extension Charge Time
Discharge Current
VFFB = 0 to 5V to VGATE(H) = 9V to 1V;
VCC1 = VCC2 = 12V
VFFB = 0V
100
125
ns
0.3
µA
No Switching
No Switching
VFB = COMP = VFFB
VFB = COMP = VFFB
8.5
13.5
mA
1.6
3.0
mA
8
13
mA
2
5
mA
VFFB = 1.5V; VSS = 5V
VSS = VFFB = 0
COFF to 5V; VFB >1V
3
1.0
1.6
2.2
µs
5.0
8.0
11.0
µs
5.0
mA
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