MV830 Просмотр технического описания (PDF) - Knox Semiconductor, Inc
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MV830 Datasheet PDF : 1 Pages
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ABRUPT VARACTOR DIODES
MV830 - MV840
PART
NUMBER
MV830
MV831
MV832
MV833
MV834
MV835
MV836
MV837
MV838
MV839
MV840
CT DIODE CAPACITANCE
Vr = 4 Vdc, f = 1 MHz
(pF)
MIN
NOM
MAX
13.5
15.0
16.5
16.2
18.0
19.8
19.8
22.0
24.2
24.3
27.0
29.7
29.7
33.0
36.3
35.1
39.0
42.9
42.3
47.0
51.7
50.4
56.0
61.6
61.2
68.0
74.8
73.8
82.0
90.2
90.0
100.0
110.0
Q, QUALITY FACTOR
Vr = 4 Vdc
f = 50 MHz
MIN
TYP
30
35
25
30
25
30
25
30
20
25
20
25
15
20
15
20
15
20
10
15
10
15
TR, TUNING RATIO
f = 1 MHz
C•4V / C•25V
MIN
TYP
1.8
2.00
1.8
2.00
1.8
2.10
1.8
2.10
1.9
2.12
1.9
2.12
1.9
2.15
1.9
2.15
2.0
2.18
2.0
2.18
2.0
2.18
Package Style
DC Power Dissipation
Min Reverse Breakdown Voltage
Max Reverse Current (IR)
Operating Temperature (Topr)
Storage Temperature (Tstg)
unction Temperature
@ Ta = 25° C
@ Ir = 10 µA
@ 25 Vdc
DO-7
400 mW
30 Vdc
0.2 µA
-65 to + 150° C
-65 to + 200 ° C
+ 175° C
P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX 207-236-9558
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