BDX67C Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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BDX67C

NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR

Semelab - > TT Electronics plc  

MECHANICAL DATA

Dimensions in mm

26.6 max.

4.2

B

E

9.0 max.

2.5

BDX67

BDX67A

BDX67B

BDX67C

NPN EPITAXIAL BASE

DARLINGTON POWER

TRANSISTOR

NPN epitaxial base transistors in

monolithic Darlington circuit for

audio output stages and general

amplifier and switching

applications.

10.9

12.8

PNP complements are:

BDX66, BDX66A, BDX66B, BDX66C.

TO3 Package.

Case connected to collector.

ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)

BDX BDX BDX BDX

67 67A 67B 67C

VCEO

Collector - emitter voltage (open base)

60 80 100 120 V

VCBO

Collector - base voltage (open emitter)

80 100 120 140 V

VEBO

Emitter - base voltage (open collector)

5 5 5 5V

IC

Collector current

16

A

ICM

Collector current (peak)

20

A

IB

Base current

250

mA

Ptot

Total power dissipation at Tmb= 25°C

150

W

Tj

Maximum junction temperature

200

°C

Tstj

Storage junction temperature

-65 to +200

°C

Rth j-mb

Thermal resistance, junction to mounting base.

1.17

K/ W

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

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