ISPGDX80A-7T100 Просмотр технического описания (PDF) - Lattice Semiconductor

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ISPGDX80A-7T100

In-System Programmable Generic Digital Crosspoint™

Lattice Semiconductor 

Specifications ispGDX Family

Absolute Maximum Ratings 1

Supply Voltage Vcc ................................. -0.5 to +7.0V

Input Voltage Applied ........................ -2.5 to VCC +1.0V

Off-State Output Voltage Applied ..... -2.5 to VCC +1.0V

Storage Temperature ................................ -65 to 150°C

Case Temp. with Power Applied .............. -55 to 125°C

Max. Junction Temp. (TJ) with Power Applied ... 150°C

1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional

operation of the device at these or at any other conditions above those indicated in the operational sections of this specification

is not implied (while programming, follow the programming specifications).

DC Recommended Operating Conditions

SYMBOL

VCC

VIL1

VIH1

Supply Voltage

Input Low Voltage

Input High Voltage

1. Typical 100mV of input hysteresis.

PARAMETER

Commercial TA = 0°C to +70°C

MIN.

4.75

0

2.0

MAX.

5.25

0.8

Vcc + 1

UNITS

V

V

V

Capacitance (TA=25oC, f=1.0 MHz)

SYMBOL

C1

C2

PARAMETER

I/O Capacitance

Dedicated Clock Capacitance

TYPICAL

8

10

UNITS

pf

pf

TEST CONDITIONS

VCC = 5.0V, VI/O = 2.0V

VCC = 5.0V, VY= 2.0V

Table 2 - 0006

Erase/Reprogram Specifications

PARAMETER

ispGDX Erase/Reprogram Cycles

MINIMUM

10,000

MAXIMUM

–

UNITS

Cycles

6

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