2SH14 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SH14 Datasheet PDF : 8 Pages
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2SH14
Typical Transfer Characteristics
100
80
60
Tc = –25 °C
40
25 °C
75 °C
20
Pulse Test
VCE = 10 V
0
4
8
12 16 20
Gate to Emitter Voltage V GE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
10
8
20 A
10 A
6
IC = 30 A
4
2
Pulse Test
0
4
8
12 16 20
Gate to Emitter Voltage V GE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
50
Pulse Test
VGE = 15 V
20
10
Tc =75 °C
5
25 °C
–25 °C
2
1
0.51 2
5 10 20 50 100
Collector Current IC (A)
10000
1000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
Coes
100
VGE = 0
Cres
f = 1 MHz
100
0
10 20 30
40 50
Collector to Emitter Voltage VCE (V)
4
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