LP62E16128A-T(2003) Просмотр технического описания (PDF) - AMIC Technology

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LP62E16128A-T
(Rev.:2003)

128K X 16 BIT LOW VOLTAGE CMOS SRAM

AMIC Technology 

LP62E16128A-T Series

Absolute Maximum Ratings*

VCC to GND ............................................... -0.5V to +3.0V

IN, IN/OUT Volt to GND.....................-0.5V to VCC + 0.5V

Operating Temperature, Topr .................... -25°C to +85°C

Storage Temperature, Tstg...................... -55°C to +125°C

Power Dissipation, PT ................................................0.7W

*Comments

Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to this device.

These are stress ratings only. Functional operation of this

device at these or any other conditions above those

indicated in the operational sections of this specification is

not implied or intended. Exposure to the absolute

maximum rating conditions for extended periods may

affect device reliability.

DC Electrical Characteristics (TA = -25°C to + 85°C, VCC = 1.65V to 2.2V, GND = 0V)

Symbol

Parameter

LP62E16128A-70LLT

Unit

Min.

Max.

Conditions

⏐ILI⏐ Input Leakage Current

-

1

µA VIN = GND to VCC

⏐ILO⏐ Output Leakage Current

-

ICC Active Power Supply Current

-

ICC1

-

Dynamic Operating

Current

ICC2

-

ISB1 Standby Power

-

VOL Output Low Voltage

-

VOH Output High Voltage

1.4

CE = VIH or LB = VIH or

1

µA

HB = VIH or OE = VIH or

WE = VIH

VI/O = GND to VCC

5

mA CE = VIL , II/O = 0mA

Min. Cycle, Duty = 100%

25

mA

CE = VIL, II/O = 0mA

10

mA

CE = VIL, VIH = VCC,

VIL = 0V, f = 1MHz,

II/O = 0 mA

10

µA CE ≥ VCC - 0.2V,

VIN ≥ 0V

0.2

V

IOL = 0.1 mA

-

V

IOH = -0.1 mA

(December, 2003, Version 1.3)

5

AMIC Technology, Corp.

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