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2N3810DCSM Datasheet PDF : 4 Pages
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SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810DCSM
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
V(BR)CBO
Collector-Base
Breakdown Voltage
IC = -10µA
IE = 0
-60
V(BR)CEO(2)
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
-60
V(BR)EBO
Emitter-Base
Breakdown Voltage
IE = -10µA
IC = 0
-5
ICBO
Collector-Cut-Off
Current
VCB = -50V
IE = 0
TA = 150°C
IEBO
Emitter-Cut-Off
Current
VEB = -4V
IC = 0
IC = -10µA
VCE = -5V
100
IC = -100µA
VCE = -5V
150
hFE(2)
Forward-current
TA = -55°C
60
transfer ratio
IC = -500µA
VCE = -5V
150
IC = -1.0mA
VCE = -5V
150
VBE(2)
IC = -10mA
VCE = -5V
125
Base-Emitter Voltage IC = -100µA
VCE = -5V
VBE(sat)(2)
Base-Emitter
Saturation Voltage
IC = -100µA
IC = -1.0mA
IB = -10µA
IB = = -100µA
VCE(sat) (2)
Collector-Emitter
Saturation Voltage
IC = -100µA
IC = -1.0mA
IB = -10µA
IB = = -100µA
Typ
Max. Units
V
-10
nA
-10
µA
-20
nA
450
450
450
-0.7
-0.7
V
-0.8
-0.2
-0.25
ELECTRICAL MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min. Typ
hFE1 (3)
hFE2
Forward-current
transfer ratio (gain IC = -100µA
VCE = -5V
0.9
ratio)
|VBE1-VBE2|
Base-Emitter Voltage
Differential
VCE = -5V
IC = -10µA to -10mA
VCE = -5V
IC = -100µA
VCE = -5V
IC = -100µA
|∆(VBE1-VBE2)∆TA|
Base-Emitter Voltage
Differential Change
Due To Temperature
TA1 = 25°C
VCE = -5V
TA2 = -55°C
IC = -100µA
TA1 = 25°C
TA2 = 125°C
Max.
1.0
5
3
0.8
1.0
Units
mV
mV
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) The lower of the two readings is taken as hFE1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 2873
Issue 2
Page 2 of 4
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