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EP7309 Просмотр технического описания (PDF) - Cirrus Logic

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EP7309 Datasheet PDF : 46 Pages
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Static Memory Burst Read Cycle
EP7309
High-Performance, Low-Power System on Chip
EXPCLK
nCS
A
nMWE
nMOE
HALF
WORD
WORD
D
EXPRDY
WRITE
tCSd
tAd
tAh
tAh
tAh
tCSh
tMOEd
tHWd
tMOEh
tWDd
tDs tDh
tDs tDh
tDs tDh
tDs tDh
tWRd
tEXs
tEXh
Figure 4. Static Memory Burst Read Cycle Timing Measurement
Note:
1. Four cycles are shown in the above diagram (minimum wait states, 1-0-0-0). This is the maximum number of consecutive
cycles that can be driven. The number of consecutive cycles can be programmed from 2 to 4, inclusively.
2. The cycle time can be extended by integer multiples of the clock period (27 ns at 36 MHz, 54 ns at 18.432 MHz, and
77 ns at 13 MHz), by either driving EXPRDY low and/or by programming a number of wait states. EXPRDY is sampled on
the falling edge of EXPCLK before the data transfer. If low at this point, the transfer is delayed by one clock period where
EXPRDY is sampled again. EXPCLK need not be referenced when driving EXPRDY, but is shown for clarity.
3. Consecutive reads with sequential access enabled are identical except that the sequential access wait state field is used to
determine the number of wait states, and no idle cycles are inserted between successive non-sequential ROM/expansion
cycles. This improves performance so the SQAEN bit should always be set where possible.
DS507PP1
Copyright 2001 Cirrus Logic (All Rights Reserved)
15

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