IRIS4013(K)
Electrical Characteristics (for Control IC)
VCC = 18V, (TA = 25°C) unless otherwise specified.
Symbol
VCCUV+
VCCHYS
IQCCUV
IQCC
TOFF/(MAX)
TTH(2)
TOFF/(MIN)
VTH(1)
VTH(2)
IOCP/FB
VCC(OVP)
IIN(H)
VIN(LaOFF)
TJ(TSD)
Definition
Min. Typ. Max. Units Test Conditions
VCC supply undervoltage positive going threshold
14.4
VCC supply undervoltage lockout hysteresis
5.4
UVLO mode quiescent current
—
Quiescent operating VCC supply current
—
Maximum OFF time
40
Minimum input pulse width for quasi resonant signals —
16 17.6
V
6.0 6.6
— 100 µA
— 30 mA
— 60
— 1.0 µsec
VCC < VCCUV+
Minimum OFF time
—
— 1.5
OCP/FB terminal threshold voltage 1
OCP/FB terminal threshold voltage 2
0.68 0.73 0.78
V
1.3 1.45 1.6
OCP/FB terminal sink current
1.1 1.35 1.7 mA
VCC overvoltage protection limit
Latch circuit sustaining current
20.5 22.5 24.5 V
—
— 400 µA
Latch circuit reset voltage
Thermal shutdown activation temperature
6.6
— 8.4
V
140
——
oC
Electrical Characteristics (for MOSFET)
(TA = 25°C) unless otherwise specified.
Symbol
VDSS
IDSS
RDS(ON)
tr
THj-C
Definition
Drain-to-source breakdown voltage
Drain leakage current
On-resistance
Rise time (10% to 90%)
Thermal resistance
Min. Typ. Max. Units Test Conditions
650 — —
V
—
— 300 µA Vds=650V, VGS=0V
—
— 1.95
Ω
V3-1=10V, ID=5.1A
—
— 250 ns
—
— 0.7 oC/W Between junction
and case
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