A42L2604(2002) Просмотр технического описания (PDF) - AMIC Technology

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A42L2604
(Rev.:2002)

4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

AMIC Technology 

A42L2604 Series

AC Characteristics (continued) (VCC = 3.3V ± 0.3V, VSS = 0V, Ta = 0°C to +70°C or -40°C to +85°C)

Test Conditions:

Input timing reference level: VIH/VIL=2.0V/0.8V

Output reference level: VOH/VOL=2.0V/0.8V

Output Load: 2TTL gate + CL (50pF)

Assumed tT=2ns

Std

# Symbol

Parameter

40

tOEH

OE Hold Time from WE

41

tOEP

OE High Pulse Width

42

tPC

Read or Write Cycle Time (EDO Page)

-45

-50

Unit

Min. Max. Min. Max.

7

-

8

-

ns

5

-

5

-

ns

18

-

20

-

ns

43

tCPA

Access Time from CAS Precharge

(EDO Page)

44

tCP

CAS Precharge Time

45

tPCM EDO Page Mode RMW Cycle Time

-

21

-

23

ns

7

-

8

-

ns

46

-

50

-

ns

46

tCRW

EDO Page Mode CAS Pulse Width

(RMW)

47

tRASP RAS Pulse Width (EDO Page)

48

tCSR

CAS Setup Time ( CAS -before- RAS )

49

tCHR

CAS Hold Time ( CAS -before- RAS )

50

tRPC

RAS to CAS Precharge Time

35

-

38

-

ns

45

200K

50

200K

ns

5

-

5

-

ns

10

-

10

-

ns

10

-

10

-

ns

51

tOEZ

Output Buffer Turn-off Delay from OE

-

2

-

3

ns

52

tRASS RAS pulse width ( C -B-R self refresh)

100

-

100

-

µs

53

tRPS

RAS precharge time ( C -B-R self refresh)

76

-

84

-

ns

54

tCHS

CAS hold time ( C -B-R self refresh)

-50

-

-50

-

ns

Notes

13

12

3

3

8

PRELIMINARY (June, 2002, Version 0.3)

8

AMIC Technology, Inc.

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