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STTH110(2003) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
Список матч
STTH110
(Rev.:2003)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH110 Datasheet PDF : 5 Pages
1 2 3 4 5
STTH110/A
THERMAL PARAMETERS
Symbol
Rth (j-l) Junction to lead
Rth (j-a) Junction to ambient
Parameter
L = 10 mm
L = 10 mm
DO-41
SMA
DO-41
Value
45
30
110
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR
Reverse leakage current VR = 1000V Tj = 25°C
10
µA
Tj = 125°C
50
VF
Forward voltage drop
IF = 1 A
Tj = 25°C
1.7
V
Tj = 150°C
0.98 1.42
To evaluate the maximum conduction losses use the following equation :
P = 1.20 x IF(AV) + 0.225 x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
trr
Reverse recovery time IF = 0.5 A
Tj = 25°C
Irr = 0.25 A IR = 1A
75 ns
tfr
Forward recovery time
IF = 1 A
Tj = 25°C
VFP
Forward recovery voltage
dIF/dt = 50 A/µs
VFR = 1.1 x VFmax
300 ns
18 V
2/5

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