BC161/16 Просмотр технического описания (PDF) - Comset Semiconductors
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BC161/16 Datasheet PDF : 3 Pages
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PNP BC160/10 – BC160/16
PNP BC161/10 – BC161/16
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
-ICES
-VCB0
-VCE0 (*)
-VEB0
-VCE(SAT)
(*)
-VBE (*)
Ratings
Collector – Cutoff Current
Collector – Base Breakdown
Voltage
Collector – Emitter
Breakdown Voltage
Emitter – Base Breakdown
Voltage
Collector-Emitter saturation
Voltage
Base-Emitter Voltage
Test Condition(s)
IE= 0 ;VCES= 40 V
IE= 0 ;VCES= 60 V
IE= 0 ; V
Tamb = 150°c
VCES=40 V
VCES=60 V
-IC = 100 µA
IE= 0
-IC = 10 mA
IB= 0
-IE= 100 µA
IC= 0
-IC= 100 mA , -IB= 10 mA
-IC= 500 mA , -IB= 50 mA
-IC= 1 A, -IB= 100 mA
-IC= 1 A , -VCE= 1V
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
BC160
BC161
-IC= 100 µA , -VCE= 1 V
Gr 10
Gr 16
hFE (*)
DC Current Gain
fT
CCBO
toff
ton
Transition Frequency
Collector – base
Capacitance
Turn-off times
Turn-on times
-IC= 100 mA , -VCE= 1 V
-IC= 1 A , -VCE= 1 V
-IC= 50 mA , -VCE= 10 V
IE= 0 ; -VCB= 20V
f = 1 MHZ
-IC=100 mA
-IB1=-IB2=5 mA
-IC=100 Ma
-IB1=1 mA
Gr 10
Gr 16
Gr 10
Gr 16
(*) Pulsed : pulse duration = 300µs, duty cycle = 1%
Min Typ Mx Unit
-
- 100 nA
-
- 100 µA
40 -
60 -
-
-
V
40 -
60 -
-
-
V
5
--
V
- 0.1
- 0.35
- 0.6 1
V
1 1.7
- 110 -
- 80 -
- 120 -
40 140 250
63 100 160 -
100 160 250
- 26 -
- 20 -
- 30 -
50
-
-
MHZ
- 15 30 pF
-
- 650 ns
-
- 500 ns
COMSET SEMICONDUCTORS
2/3
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