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RMPA39100 Просмотр технического описания (PDF) - Fairchild Semiconductor

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RMPA39100
Fairchild
Fairchild Semiconductor Fairchild
RMPA39100 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
June 2004
RMPA39100
37–40 GHz 1 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor’s RMPA39100 is a high
efficiency power amplifier designed for use in point to point
and point to multi-point radios, and various communi-
cations applications. The RMPA39100 is a 3-stage GaAs
MMIC amplifier utilizing our advanced 0.15µm gate length
Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required
total power output.
Features
• 18dB small signal gain (typ.)
• 30dBm saturated power out (typ.)
• Circuit contains individual source vias
• Chip size 4.28mm x 3.19mm x 50µm
Device
Absolute Ratings
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TSTG
R JC
Parameter
Positive DC Voltage (+5V Typical)
Negative DC Voltage
Simultaneous (Vd–Vg)
Positive DC Current
RF Input Power (from 50source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance (Channel to Backside)
Ratings
+6
-2
+8
1392
18
-30 to +85
-55 to +125
9
Units
V
V
V
mA
dBm
°C
°C
°C/W
©2004 Fairchild Semiconductor Corporation
RMPA39100 Rev. C

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