HIP4080A/81AEVALZ Просмотр технического описания (PDF) - Intersil

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HIP4080A/81AEVALZ

HIP4080A, 80V High Frequency H-Bridge Driver

Intersil 

Application Note 9404

Quick Help Table

The quick help table has been included to help locate

solutions to problems you may have in applying the

HIP4080A.

PROBLEM

Low chip bias voltages (VCC and VDD)

High chip bias voltages (VCC and VDD)

Bootstrap capacitor(s) too small

Bootstrap capacitor(s) too large

RGATE too small

RGATE too large

Dead-time too small

HIP4080A IC gets too hot

Lower MOSFETs turn on, but upper MOSFETs

don't

EFFECT

May cause power MOSFETs to exhibit excessive RDSON, possibly overheating them. Below about

6V, the IC may not function properly.

At VDD voltages above about 12V. The charge pump limiter will begin to operate, in turn drawing

heavier VDD current. Above 16V, breakdown may occur.

May cause insufficient or soft charge delivery to MOSFETs at turn-on causing MOSFET overheating.

Charge pump will pump charge, but possibly not quickly enough to avoid excessive switching losses.

Dead-time may need to be increased in order to allow sufficient bootstrap refresh time. The

alternative is to decrease bootstrap capacitance.

Smaller values of RGATE reduces turn-on/off times and may cause excessive emi problems.

Incorporating a series gate resistor with an anti-parallel diode can solve EMI problem and add to the

dead time, reducing shoot-through tendency.

Increases switching losses and MOSFET heating. If anti-parallel diode mentioned above is in

backwards, turn-off time is increased, but turn-on time is not, possibly causing a shoot-through fault.

Reduces “refresh” time as well as dead time, with increased shoot-through tendency. Try increasing

HDEL and LDEL resistors (don't exceed 250kΩ).

Reduce bus voltage, switching frequency, choose a MOSFET with lower gate capacitance or reduce

bias voltage (if it is not below 10V to 12V). Shed some of the low voltage gate switching losses in the

HIP4080A by placing a small amount of series resistance in the leads going to the MOSFET gates,

thereby transferring some of the IC losses to the resistors.

Check that the HEN terminal is not tied low inadvertently.

Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to

verify that the Application Note or Technical Brief is current before proceeding.

For information regarding Intersil Corporation and its products, see www.intersil.com

11

AN9404.3

December 11, 2007

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