2N6057(V2) Просмотр технического описания (PDF) - Comset Semiconductors

Номер в каталоге

Компоненты Описание

Список матч

2N6057
(Rev.:V2)

POWER COMPLEMENTARY SILICON TRANSISTORS

Comset Semiconductors 

VCE(SAT)

VBE(SAT)

VBE(ON)

fT

hFE

IC=6 A, IB=24 mA

Collector-Emitter saturation

Voltage (*)

IC=12 A, IB=120 mA

Base-Emitter Saturation

Voltage (*)

IC=12 A, IB=120 mA

Base-Emitter Voltage (*)

IC=6 A, VCE=3 V

Transition Frequency

IC=5 A, VCE=3 V, f=1 MHz

DC Current Gain (*)

VCE=3 V, IC=6.0 A

VCE=3.0 V, IC=12 A

2N6050

2N6057

2N6051

2N6058

-

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

-

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

-

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

-

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

4

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

750

2N6052

2N6059

2N6050

2N6057

2N6051

2N6058

100

2N6052

2N6059

- 2.0

V

- 3.0

-

4

V

- 2.8 V

-

- MHz

- 18000 -

-

-

! ! ! For PNP types current and voltage values are negative ! ! !

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

Page 4 of 5

Share Link: