BUX12(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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BUX12 Datasheet PDF : 3 Pages
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NPN BUX12
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
VEB0(SUS)
ICEO
ICEX
IEBO
hFE
VCE(SAT)
VBE(SAT)
IS/B
ES/B
fT
ton
ts
tf
Collector-Emitter Sustaining Voltage
(*)
Emitter-Base Breakdown Voltage
(*)
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter saturation Voltage (*)
Second breakdown collector current
Clamped ES/B Collector current
Transition frequency
Turn-on time
IC=200 mA
IC=0A, IE=50 mA
VCE=200 V, IB=0A
VCE= VCEX, VBE= -1.5V
VCE= VCEX, VBE= -1.5V
Tcase = 125°C
VEB=5.0 V, IC=0
IC=5 A, VCE=4.0 V
IC=10 A, VCE=4.0 V
IC=5 A, IB=0.5 A
IC=10 A, IB=1.25 A
IC=10 A, IB=1.25 A
VCE=30 V, ts = 1s
VCE=140 , ts = 1s
Vclamp=250 V, L=500 µH
VCE=15 V, IC=1 A
f=10 MHz
IC=10 A, IB=1.25 A
VCC=150 V
Storage time
File time
IC=10 A, VCC=150 V
IB1 = -IB2 =1.25 A
Min Typ Max Unit
250 -
-
V
7
-
-
V
-
-
1.5 mA
-
-
1.5
-
-
6
mA
-
-
1 mA
20
10
-
-
60
-
-
- 0.22 1
-
0.5 1.5
V
- 1.23 1.5
5
-
0.15 -
-
-
A
10
-
-
A
8
-
- MHz
- 0.28 1
- 1.45 2
µs
- 0.23 0.5
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
26/10/2012
COMSET SEMICONDUCTORS
3/3
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