MJ4032(V2) Просмотр технического описания (PDF) - Comset Semiconductors
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MJ4032 Datasheet PDF : 4 Pages
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ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO
ICEO
IEBO
ICER
VCE(SAT)
Collector-Emitter Voltage (*) IC=100 mAdc, IB=0
Collector Cutoff Current
VCE=30 Vdc, IB=0
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
Emitter Cutoff Current
VBE=5.0 V, IC=0
MJ4030
MJ4033
60
-
-
MJ4031
MJ4034
80
-
-
V
MJ4032
MJ4035
100
MJ4030
MJ4033
-
-
MJ4031
MJ4034
-
- 3.0 mA
MJ4032
MJ4035
-
-
MJ4030
MJ4033
MJ4031
MJ4034
-
- 5.0 mA
MJ4032
MJ4035
VCB=60 V, RBE=1.0 k ohm
MJ4030
MJ4033
-
VCB=80 V, RBE=1.0 k ohm
MJ4031
MJ4034
-
Collector-Emitter Leakage
Current
VCB=100 V, RBE=1.0 k ohm
VCB=60 V, RBE=1.0 k ohm,
TC=150°C
MJ4032
MJ4035
MJ4030
MJ4033
-
VCB=80 V, RBE=1.0 k ohm,
TC=150°C
MJ4031
MJ4034
-
VCB=100 V, RBE=1.0 k ohm, MJ4032
TC=150°C
MJ4035
Collector-Emitter saturation
MJ4030
Voltage (*)
MJ4033
IC=10 A, IB=40 mAdc
MJ4031
MJ4034
-
MJ4032
MJ4035
-
- 1.0
mAdc
-
- 5.0
Vdc
- 2.5
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