MJ4033 Просмотр технического описания (PDF) - Comset Semiconductors
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MJ4033 Datasheet PDF : 3 Pages
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NPN MJ4033 – MJ4034 – MJ4035
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO
Collector-Emitter
Voltage (*)
MJ4033 60 -
IC=100 mA, IB=0 MJ4034 80
-
MJ4035 100
VCE=30 Vdc, IB=0 MJ4033 -
-
ICEO
Collector Cutoff Current
VCE=40 Vdc, IB=0 MJ4034 -
-
VCE=50 V, IB=0
MJ4035 -
-
MJ4033
IEBO
Emitter Cutoff Current
VBE=5.0 V, IC=0 MJ4034 -
-
MJ4035
ICER
VCE(SAT)
Collector-Emitter Leakage
Current
Collector-Emitter saturation
Voltage (*)
VCB=60 V
RBE=1.0 kΩ
VCB=80 V
RBE=1.0 kΩ
VCB=100 V
RBE=1.0 kΩ
VCB=60 V
RBE=1.0 kΩ
TC=150°C
VCB=80 V
RBE=1.0 kΩ
TC=150°C
VCB=100 V
RBE=1.0 kΩ
TC=150°C
IC=10 A
IB=40 mA
IC=16 A
IB=80 mA
MJ4033 -
-
MJ4034 -
-
MJ4035
MJ4033 -
-
MJ4034 -
-
MJ4035
MJ4033
MJ4034 -
-
MJ4035
MJ4033
MJ4034 -
-
MJ4035
VBE
Base-Emitter Voltage (*)
IC=10 A
VCE=3.0V
MJ4033
MJ4034 -
-
MJ4035
hFE
DC Current Gain (*)
VCE=10 V
IC=3.0 A
MJ4033
MJ4034 1000 -
MJ4035
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
-
-
V
3.0 mA
5.0 mA
1.0
mAdc
5.0
2.5
Vdc
4.0
3
V
-
-
29/10/2012
COMSET SEMICONDUCTORS
2|3
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