MJ4030(V2) Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
Список матч
MJ4030 Datasheet PDF : 4 Pages
| |||
MEDIUM POWER COMPLEMENTARY SILICON
TRANSISTORS
For use as output devices in complementary general purpose amplifier
applications.
• High DC current Gain – hFE=3500 (Typ) @ IC=10 Adc
• Monolithic Construction with Built-in Base Emitter Shunt Resistor
The MJ4030/31/32 ares the transistors NPN
The complementary PNP types are the MJ4033/34/35
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
IE=0
VCEO
Collector-EmitterVoltage
IB=0
VEBO
Emitter-Base Voltage
IC=0
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
MJ4030
MJ4033
MJ4031
MJ4034
MJ4032
MJ4035
Value
60
80
100
60
80
100
Unit
V
V
5.0
V
Page 1 of 4
Share Link: 