MGFS45V2527A Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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MGFS45V2527A Datasheet PDF : 3 Pages
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< L/S band internally matched power GaAs FET >
MGFS45V2527A
2.5 – 2.7 GHz BAND /32W
MGFS45V2527A TYPICAL CHARACTERISTICS
P1dB,GLP vs. f
46
VDS=10(V)
IDS=6.5(A)
45
P1dB
Po , P.A.E. vs. Pin
16
50
70
VDS=10 (V)
45
IDS=6.5(A)
f=2.6 (GHz)
15
40
Pout
60
50
44
GLP
43
42
14
35
30
13
25
12
20
40
P.A.E.
30
20
10
41
11
15
0
2.45
2.5
2.55
2.6
2.65
2.7
2.75
15
20
25
30
35
FREQ UENCY f (GHz)
INPUT POWER (dBm)
Po,IM3 vs. Pin
42
20
VDS=10(V)
IDS=6.5(A)
40 f1=2.700(GHz)
Po
10
f2=2.705(GHz)
38
0
36
-10
34
-20
IM3
32
-30
30
-40
28
-50
26
-60
24
-70
14 16 18 20 22 24 26 28 30 32 34
INPUT POWER Pin (dBm S.C.L.)
MGFS45V2527A S-parameters ( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )
f
(GHz)
2.40
2.42
2.44
2.46
2.48
2.50
2.52
2.54
2.56
2.58
2.60
2.62
2.64
2.66
2.68
2.70
2.72
2.74
2.76
2.78
2.80
S11
Magn. Angle(deg)
0.34
-172
0.35
-176
0.37
177
0.40
170
0.41
163
0.43
157
0.43
151
0.44
145
0.45
139
0.45
134
0.45
128
0.45
122
0.44
116
0.44
110
0.43
103
0.42
96
0.40
88
0.39
80
0.37
71
0.36
61
0.34
50
S-Parameter (TYP.)
S21
S12
Magn. Angle(deg) Magn. Angle(deg)
4.68
75
0.03
40
4.65
70
0.03
34
4.63
64
0.03
26
4.60
58
0.03
19
4.56
52
0.03
14
4.53
46
0.03
5
4.51
40
0.03
-1
4.49
34
0.04
-9
4.47
28
0.03
-15
4.44
22
0.04
-22
4.43
16
0.04
-29
4.42
10
0.04
-37
4.41
4
0.04
-42
4.40
-2
0.04
-50
4.40
-8
0.04
-55
4.39
-14
0.04
-62
4.37
-21
0.04
-70
4.37
-27
0.04
-74
4.35
-34
0.04
-79
4.34
-40
0.04
-88
4.32
-47
0.04
-95
S22
Magn. Angle(deg)
0.26
-48
0.26
-53
0.24
-57
0.24
-65
0.22
-69
0.21
-79
0.20
-81
0.20
-86
0.20
-91
0.20
-97
0.19
-104
0.19
-108
0.19
-113
0.19
-117
0.19
-120
0.18
-126
0.18
-128
0.17
-133
0.17
-136
0.16
-138
0.16
-141
Publication Date : Apr., 2011
2
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