HVM14 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HVM14

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Hitachi -> Renesas Electronics 

HVM14

Absolute Maximum Ratings (Ta = 25°C)

Item

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

Symbol

VR

IF

Pd

Tj

Tstg

Value

Unit

50

V

50

mA

100

mW

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Forward voltage

VF

Reverse current

IR

Capacitance

C

Forward resistance

rf

ESD-Capability

—

—

—

1.0

V

—

—

100 nA

—

0.25 —

pF

—

—

7.0

Ω

200 —

—

V

IF = 50mA

VR = 50V

VR = 50V, f = 1MHz

IF = 10mA, f = 100MHz

*C = 200pF, Both forward and

reverse direction 1 pulse.

Note: Failure criterion; IR ≥ 200nA at VR = 50V

10 –1

10–3

10–5

10–7

10–9

10–11

0

0.2 0.4 0.6 0.8 1.0

Forward voltage VF (V)

Fig.1 Forward current Vs. Forward voltage

2

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