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TEA1024T

High efficiency DC/DC converter

Philips Electronics 

Philips Semiconductors

High efficiency DC/DC converter

Product specification

TEA1204T

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

Current levels

Iq

ISHDWN

IlimN

IlimP

ILX(max)

quiescent current at pin 3

shut-down current

current limit NFET

current limit PFET

maximum continuous current

at pin 5

up mode

up mode; note 1

down mode; note 1

50

60

70

µA

−

2

10

µA

2.38 2.80 3.20 A

2.05 2.40 2.75 A

−

−

1.0

A

Power MOSFETS

RdsON(N)

RdsON(P)

pin-to-pin resistance NFET

pin-to-pin resistance PFET

Timing

fsw

switching frequency

tres

response time from standby to

Pmax

Temperature

Tamb

Tmax

operating ambient temperature

internal cut-off temperature

Digital levels

VlL

LOW-level input voltage pins

1, 2, 7 and 8

VIH

HIGH-level input voltage pin 1 note 2

VIH

HIGH-level input voltage pin 2 notes 2 and 3

VIH

HIGH-level input voltage

notes 2 and 3

pins 7 and 8

0.08 0.12 0.20 Ω

0.10 0.16 0.25 Ω

150

200

240

kHz

−

25

−

µs

−20

+25

+80

°C

150

165

180

°C

0

−

V3 − 0.4 −

2.0

−

2.9

−

0.4

V

V3 + 0.3 V

V3 + 0.3 V

V3 + 0.3 V

Sense pin resistance

RSENSE

SENSE pin resistance to GND up or down to 3.3 V mode

down to 3.6 V mode

up to 5.0 V mode

437.2 546.5 655.8 kΩ

476.8 596.0 715.2 kΩ

662.2 827.8 993.4 kΩ

Notes

1. The average inductor current during current limit also depends on inductance value and resistive losses in all

components in the power path. In normal applications, the average current will be limited to 2.3 A (typ.), with limits

scaled down to minimum 2.07 A and maximum 2.53 A.

2. V3 is the voltage at pin 3 (UPOUT/DNIN).

3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum

increase is 300 µA in the event that pin 2 is at 2.0 V.

1998 Mar 02

9

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