BDW83C_07 Просмотр технического описания (PDF) - STMicroelectronics

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BDW83C_07

NPN power Darlington transistor

STMicroelectronics 

BDW83C

2

Electrical characteristics

Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

ICBO

Collector cut-off current

(IE = 0)

ICEO

Collector cut-off current

(IB = 0)

IEBO

Emitter cut-off current

(IC = 0)

VCEO(sus)(1)

Collector-emitter

sustaining voltage

(IB = 0)

VCE(sat)(1)

Collector-emitter

saturation voltage

VBE(on)(1) Base-emitter on voltage

hFE(1)

DC current gain

VCB = 100 V

VCB = 100 V TC = 150°C

VCE = 40 V

VEB = 5 V

IC = 30 mA

IC = 6 A

IC = 15 A

IC = 6 A

IC = 6 A

IC = 15 A

IB = 12 mA

IB = 150 mA

VCE = 3 V

VCE = 3 V

VCE = 3 V

VF

Diode forward voltage IF = 10 A

Resistive load

ton

Turn-on time

toff

Turn-off time

VCC = 30 V IC = 10 A

IB1 = -IB2 = 40 mA

1. Pulsed duration = 300 µs, duty cycle ≤1.5%.

Min. Typ. Max. Unit

500 µA

5 mA

1 mA

2 mA

100

V

2.5 V

4

V

2.5 V

750

20000

100

4

V

0.9

µs

6

µs

3/8

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