F1010ES Просмотр технического описания (PDF) - International Rectifier

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F1010ES

HEXFET® Power MOSFET

International Rectifier 

IRF1010ES/IRF1010EL

15V

VDS

L

DR IV ER

RG

2V0GVS

tp

D.U .T

IA S

0.01Ω

+

-

VDD

A

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

VGS

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

800

 TOP

ID

20A

35A

BOTTOM 50A

600

400

200

0

25

50

75

100 125 150 175

Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

6

www.irf.com

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