IRFIB6N60A Просмотр технического описания (PDF) - International Rectifier
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IRFIB6N60A Datasheet PDF : 8 Pages
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IRFIB6N60A
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
-
-
+
· dv/dt controlled by RG
· Driver same type as D.U.T.
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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