PD - 94322
IRFP17N50L
Applications
SMPS MOSFET HEXFET® Power MOSFET
l
l
Switch Mode Power Supply (SMPS)
Zero Voltage Switching (ZVS) and High
VDSS
Frequency Circuit
500V
RDS(on) typ. Trr typ. ID
0.28Ω
170ns 16A
l Uninterruptible Power Supply
l High Speed Power Switching
l PWM Inverters
Benefits
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
l Low Trr and Soft Diode Recovery
l High Performance Optimised Anti-parallel Diode
Absolute Maximum Ratings
Parameter
Max.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
16
11
64
220
1.8
± 30
13
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
-55 to + 150
300
Mounting Torque, 6-32 or M3 screw
10
TO-247AC
Units
A
W
W/°C
V
V/ns
°C
lbft.in(N.m)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
16
MOSFET symbol
D
––– –––
A showing the
64
integral reverse
G
––– –––
p-n junction diode.
S
––– ––– 1.5 V TJ = 25°C, IS = 16A, VGS = 0V
––– 170 250
––– 220 330
ns
TJ = 25°C
TJ = 125°C
IF = 16A
di/dt = 100A/µs
––– 470 710 nC TJ = 25°C
––– 810 1210
TJ = 125°C
––– 7.3 11 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
09/20/01