IRF3709L Просмотр технического описания (PDF) - International Rectifier

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IRF3709L

HEXFET® Power MOSFET

International Rectifier 

IRF3709/3709S/3709L

1000

TOP

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 2.7V

100

2.7V

10

1000

TOP

VGS

15V

10V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 2.7V

100

2.7V

10

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 25° C

TJ = 150° C

10

2.0

V DS= 15V

20µs PULSE WIDTH

3.0

4.0

5.0

6.0

7.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0 ID = 90A

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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