IRF3709/3709S/3709L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
0.029
6.4
7.4
–––
–––
–––
–––
–––
–––
–––
9.0
10.5
3.0
20
100
200
-200
V
V/°C
mΩ
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
53 ––– –––
––– 27 41
S VDS = 15V, ID = 30A
ID = 15A
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
––– 6.7 ––– nC VDS = 16V
––– 9.7 –––
VGS = 5.0V
Qoss
td(on)
Output Gate Charge
Turn-On Delay Time
––– 22 –––
––– 11 –––
VGS = 0V, VDS = 10V
VDD = 15V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 171 ––– ns ID = 30A
––– 21 –––
RG = 1.8Ω
––– 9.2 –––
VGS = 4.5V
––– 2672 –––
VGS = 0V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
––– 1064 ––– pF VDS = 16V
––– 109 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
382
30
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– 90
A
––– 360
0.88 1.3 V
0.82 –––
48 72 ns
46 69 nC
48 72 ns
52 78 nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 30A, VR=15V
di/dt = 100A/µs
TJ = 125°C, IF = 30A, VR=15V
di/dt = 100A/µs
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