IRF530N Просмотр технического описания (PDF) - International Rectifier

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IRF530N

HEXFET® Power MOSFET

International Rectifier 

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

IRF530N

4.5V

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

TJ = 175 °C

1

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25 °C

TJ = 175 ° C

10

4.0

V DS= 50V

20µs PULSE WIDTH

5.0

6.0

7.0

8.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.5 ID = 15A

3.0

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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