IRF5M3710 Просмотр технического описания (PDF) - International Rectifier

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IRF5M3710

HEXFET® POWER MOSFET THRU-HOLE (TO-254AA)

International Rectifier 

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

IRF5M3710

10

4.5V

20µs PULSE WIDTH

TJ= 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

4.5V

20µs PULSE WIDTH

TJ= 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

TJ = 25°C

100

TJ = 150° C

10

V DS=1550V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 35A

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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