IRF5NJ3315 Просмотр технического описания (PDF) - International Rectifier

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IRF5NJ3315

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

IRF5NJ3315

4.5V

20µs PULSE WIDTH

TJ= 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

TJ = 150 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 25 °C

TJ = 150°C

10

V DS= 1550V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5 ID = 20A

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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