US1A(2007) Просмотр технического описания (PDF) - Vishay Semiconductors
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US1A Datasheet PDF : 5 Pages
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100
10
TJ = 150 °C
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
US1A - US1G
0.01
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1 US1A - US1G
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
0.1
TJ = 25 °C
US1J - US1M
0.01
0.2
0.7
1.2
1.7
2.2
2.7
3.2
Instantaneous Forward Voltage (V)
Figure 5. Typical Instantaneous Forward Characteristics
US1A thru US1M
Vishay General Semiconductor
1000
100
TJ = 150 °C
TJ = 125 °C
10
1
US1J - US1M
0.1
TJ = 100 °C
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 6. Typical Reverse Leakage Characteristics
100
US1A - US1G
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
US1J - US1M
1
0.1
1
10
100
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 8. Typical Transient Thermal Impedance
Document Number: 88768 For technical questions within your region, please contact one of the following:
Revision: 27-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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