TK50P04M1 Просмотр технического описания (PDF) - Unspecified

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TK50P04M1

MOSFETs Silicon N-Channel MOS (U-MOSVI-H)

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5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 32 V, Tch = 25 (initial), L = 20 µH, RG = 1.2 Ω, IAR = 50 A

Symbol

Rth(ch-c)

Rth(ch-a)

Max

Unit

2.08

/W

125

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2/8

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